advanced power n-channel insulated gate electronics corp. bipolar transistor features high speed switching v ces low saturation voltage i c v ce(sat),typ. =2.5v@i c =40a rohs compliant & halogen-free absolute maximum ratin g s , 1/8" from case for 5 seconds . notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-a electrical characteristics@ t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces - - 500 ua - 2.5 2.9 v - 3.3 - v v ge(th) 3-7v q g - 66 105 nc q ge -12- nc q gc -36- nc t d(on) -15- ns t r -80- ns t d(off) -43- ns t f - 160 320 ns e on - 1.5 - mj e off - 0.75 - mj c ies - 1400 2240 pf c oes - 160 - pf c res -20- pf data and specifications subject to change without notice reverse transfer capacitance rise time fall time turn-off delay time turn-on switching loss turn-off switching loss v ce =390v, i c =33a, v ge =15v, r g =5 ? , inductive load v ge =0v input capacitance v ce =30v AP50G60W-HF symbol v ces 600v 40a rating collector-emitter voltage units v 600 parameter a v 150 a + 30 75 pulsed collector current 0.45 parameter v ge i c @t c =25 o c collector current gate-emitter voltage -55 to 150 150 t l 277 o c/w o c w units o c/w o c o c gate-to-emitter leakage current gate-emitter charge collector-emitter leakage current gate threshold voltage v ge =15v, i c =40a v ge =+ 30v, v ce =0v value halogen-free product maximum power dissipation test conditions thermal resistance junction-case 300 thermal resistance junction-ambient i cm parameter 1 output capacitance f=1.0mhz 40 v ge =15v, i c =75a turn-on delay time total gate charge maximum lead temp. for soldering purposes v ce(sat) collector-emitter saturation voltage 201211301 v ce =400v gate-collector charge i c =33a v ce =600v, v ge =0v v ge =15v v ce =v ge , i c =1ma i c @t c =100 o c collector current 40 a p d @t c =25 o c t j t stg operating junction temperature range storage temperature range g c e to-3p c g c e
AP50G60W-HF fig 1. typical output characteristics fig 2. gate charge characterisitics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. gate threshold voltage fi g 6. t y pical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 200 0102030 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 1 2 3 4 5 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =50a i c =40a v ge =15v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) 0 40 80 120 160 02468 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 o c 0 1000 2000 3000 1 5 9 131721252933 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 o c 0 4 8 12 16 20 0 20406080 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =33a v cc =300v v cc =400v v cc =500v i c = 1ma
fig 7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance, junction-to-case (igbt) fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. transfer characteristics fig 12. soa characteristics 3 AP50G60W-HF 0 5 10 15 20 0 4 8 121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =50a 33 a 15 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =50a 33 a 15 a t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 40 80 120 160 0481216 v ge , gate - emitter voltage (v) i c , collector current (a) t j =25 o c t j =150 o c 0 100 200 300 400 0 50 100 150 200 junction temperature ( o c ) power dissipation (w) 0.01 0.1 1 10 100 1000 1 10 100 1000 v ce ,collector - emitter voltage(v) i c ,collctor current(a) t c =25 o c single pulse 10us 100us 1ms 10ms dc
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